Product Summary

The BUW13 is a High-voltage, high-speed, glass-passivated NPN power transistor in a SOT199 package. The applications of the device include Converters, Inverters, Switching regulators and Motor control systems.

Parametrics

BUW13 absolute maximum ratings: (1)VCESM, collector-emitter peak voltage: 1000 V; (2)VCEO, collector-emitter voltage: 450 V; (3)ICsat, collector saturation current: 8 A; (4)IC, collector current (DC): 15 A; (5)ICM collector current (peak value): 30 A; (6)IB, base current (DC): 6A; (7)IBM, base current (peak value): 9 A; (8)Ptot, total power dissipation: 37W; (9)Tstg, storage temperature: -65℃ to +150℃; (10)Tj, junction temperature: - 150℃.

Features

BUW13 features: (1) VCESM, collector-emitter peak voltage: 1000 V; (2) VCEO, collector-emitter voltage: 450 V; (3) VCEsat, collector-emitter saturation voltage: 1.5 V; (4) ICsat, collector saturation current: 8 A; (5) IC, collector current (DC): 15 A; (6) ICM, collector current (peak value): 30 A; (7) Ptot, total power dissipation: 37 W.

Diagrams

BUW13 block diagram

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BUW13W
BUW13W

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BUW13F
BUW13F

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BUW13AW
BUW13AW

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BUW13AF
BUW13AF

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BUW13A
BUW13A

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BUW133H
BUW133H

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BUW133A
BUW133A

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BUW133
BUW133

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