(Hong Kong)
Product Summary
The IRG4PH50U is an insulated gate bipolar transistor. The benefits of the IRG4PH50U include Higher switching frequency capability than competitive IGBTs, Highest efficiency available, much lower conduction losses than MOSFETs, More efficient than short circuit rated IGBTs.
Parametrics
IRG4PH50U absolute maximum ratings: (1)VCES Collector-to-Emitter Breakdown Voltage: 1200V; (2)IC @ TC = 25℃ Continuous Collector Current: 45V; (3)IC @ TC = 100℃ Continuous Collector Current: 24A; (4)ICM Pulsed Collector Current: 180A; (5)ILM Clamped Inductive Load Current: 180A; (6)VGE Gate-to-Emitter Voltage: ±20V; (7)EARV Reverse Voltage Avalanche Energy: 170mJ; (8)PD @ TC = 25℃ Maximum Power Dissipation: 200W; (9)PD @ TC = 100℃ Maximum Power Dissipation: 78W; (10)TJ Operating Junction and TSTG Storage Temperature Range: -55℃ to + 150℃; (11)Soldering Temperature, for 10 seconds: 300℃.
Features
IRG4PH50U features: (1)UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, ＞200 kHz in resonant mode; (2)New IGBT design provides tighter parameter distribution and higher efficiency than previous generations; (3) Optimized for power conversion; SMPS, UPS and welding; (4) Industry standard TO-247AC package.
Diagrams
| Image | Part No | Mfg | Description |  |
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 IRG4PH50U |
International Rectifier |
IGBT UFAST 1200V 45A TO-247AC |
Data Sheet |
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IRG4PH50UD |
International Rectifier |
IGBT W/DIODE 1200V 45A TO-247AC |
Data Sheet |
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IRG4PH50UPBF |
International Rectifier |
IGBT Transistors |
Data Sheet |
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IRG4PH50UDPBF |
International Rectifier |
IGBT Transistors |
Data Sheet |
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