Product Summary

The IRFPS3810 is a power MOSFET. The IRFPS3810 is from International Rectifier utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFET is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Parametrics

IRFPS3810 absolute maximum ratings: (1)ID @ TC = 25℃ Continuous Drain Current, VGS @ 10V: 170A; (2)ID @ TC = 100℃ Continuous Drain Current, VGS @ 10V: 120A; (3)IDM Pulsed Drain Current: 670A; (4)PD @TC = 25℃ Power Dissipation: 580W; (5)Linear Derating Factor: 3.8W/℃; (6)VGS Gate-to-Source Voltage: ±30 V; (7)EAS Single Pulse Avalanche Energy: 1350mJ; (8)IAR Avalanche Current: 100A; (9)EAR Repetitive Avalanche Energy: 58mJ; (10)Peak Diode Recovery: 2.3V/ns; (11)Operating Junction and Storage Temperature Range: -55℃ to + 175℃; (12)Soldering Temperature, for 10 seconds: 300℃(1.6mm from case).

Features

IRFPS3810 features: (1)Advanced Process Technology; (2)Ultra Low On-Resistance; (3)Dynamic dv/dt Rating; (4)175℃ Operating Temperature; (5)Fast Switching; (6) Fully Avalanche Rated.

Diagrams

IRFPS3810 block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
IRFPS3810
IRFPS3810


MOSFET N-CH 100V 170A SUPER247

Data Sheet

Negotiable 
IRFPS3810PBF
IRFPS3810PBF

International Rectifier

MOSFET

Data Sheet

0-4938: $3.34