Product Summary
The IRFI740 is power MOSFET. The IRFI740 is from International Rectifier providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
Parametrics
IRFI740 absolute maximum ratings: (1)ID @ TC = 25℃ Continuous Drain Current, VGS @ 10V: 5.4A; (2)ID @ TC = 100℃ Continuous Drain Current, VGS @ 10V: 3.4A; (3)IDM Pulsed Drain Current: 22A; (4)PD @TC = 25℃ Power Dissipation: 40W; (5)Linear Derating Factor: 0.32W/℃; (6)VGS Gate-to-Source Voltage: ±20 V; (7)EAS Single Pulse Avalanche Energy: 390mJ; (8)IAR Avalanche Current: 5.4A; (9)EAR Repetitive Avalanche Energy: 4.0mJ; (10)Peak Diode Recovery: 4.0V/ns; (11)Operating Junction and Storage Temperature Range: -55℃ to + 155℃; (12)Soldering Temperature, for 10 seconds: 300℃(1.6mm from case).
Features
IRFI740 features: (1) Isolated package; (2) High Voltage Isolation= 2.5KVRMS; (3) Sink to Lead Creepage Dist=4.8mm; (4) Dynamic dv/dt rating; (5) Low thermal Resistance.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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IRFI740A |
Other |
Data Sheet |
Negotiable |
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IRFI740B |
Other |
Data Sheet |
Negotiable |
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IRFI740GLC |
Vishay/Siliconix |
MOSFET N-Chan 400V 5.7 Amp |
Data Sheet |
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IRFI740G |
Vishay/Siliconix |
MOSFET N-Chan 400V 5.4 Amp |
Data Sheet |
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IRFI740BTU |
Fairchild Semiconductor |
MOSFET |
Data Sheet |
Negotiable |
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IRFI740G, SiHFI740G |
Other |
Data Sheet |
Negotiable |
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IRFI740GPBF |
Vishay/Siliconix |
MOSFET N-Chan 400V 5.4 Amp |
Data Sheet |
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IRFI740GLCPBF |
Vishay/Siliconix |
MOSFET N-Chan 400V 5.7 Amp |
Data Sheet |
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