IRFI540NPBF

IRFI540NPBF, power MOSFET, 14A, 110W, 5.4mJ, ±20 V, TO-220

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Price:: US $0.23~0.50 / piece [Get Latest Price]

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PartNumber:: IRFI540NPBF

Brand:: International Rectifier - IR | Pack: TO | D/C: 11+

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Products Upload time: 2012-07-26

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Part Number:IRFI540NPBF
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Product Summary

The IRFI540NPBF is a power MOSFET. Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.

Parametrics

IRFI540NPBF absolute maximum ratings: (1)ID @ TC = 25℃ Continuous Drain Current, VGS @ 10V: 20A; (2)ID @ TC = 100℃ Continuous Drain Current, VGS @ 10V: 14A; (3)IDM Pulsed Drain Current: 110W; (4)PD @TC = 25℃ Power Dissipation: 54W; (5)Linear Derating Factor: 0.36W/℃; (6)VGS Gate-to-Source Voltage: ±20 V; (7)EAS Single Pulse Avalanche Energy: 300mJ; (8)IAR Avalanche Current: 16A; (9)EAR Repetitive Avalanche Current: 5.4mJ; (10)dv/dt Peak Diode Recovery dv/dt: 5.0V/ns; (11)TJ Operating Junction and Storage Temperature Range: -55℃ to + 175℃; (12)Soldering Temperature, for 10 seconds: 300℃ (1.6mm from case).

Features

IRFI540NPBF features: (1) Advanced Process Technology; (2) Isolated Package; (3) High Voltage Isolation = 2.5KVRMS; (4) Sink to Lead Creepage Dist. = 4.8mm; (5) Fully Avalanche Rated.