Product Summary

The IRF7303TRPBF is a HEXFET power MOSFET. The IRF7303TRPBF utilizes advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.

Parametrics

IRF7303TRPBF absolute maximum ratings: (1)ID @ TA=25℃ 10 Sec. Pulsed Drain Current, VGS @10V: 5.3A; (2)ID @ TA=25℃ Continuous Drain Current, VGS @10V: 4.9A; (3)ID @ TA=70℃ Continuous Drain Current, VGS @10V: 3.9A; (4)IDM Pulsed Drain Current: 20A; (5)PD @ TA=25℃ Power Dissipation: 2.0W; (6)PD @ TA=25℃ Linear Derating Factor: 0.016W/℃; (7)VGS Gate-to-Source Voltage: ±20V; (8)dv/dt Peak Diode Recovery dv/dt: 5.0V/ns; (9)Junction and Storage Temperature Range: -55℃ to 150℃.

Features

IRF7303TRPBF features: (1)Generation V Technology; (2)Ultra Low On-resistance; (3)Dual N-channel Mosfet; (4)Surface Mount; (5)Available in Tape and Reel ; (6)Dynamic dv/dt Rating; (7)Fast Switching; (8)Lead-Free.

Diagrams

IRF7303TRPBF Pin Configuration

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
IRF7303TRPBF
IRF7303TRPBF
International Rectifier
MOSFET MOSFT DUAL NCh 30V 4.9A
Data Sheet
0-1: $0.72
1-25: $0.44
25-100: $0.30
100-250: $0.29
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
IRF710
IRF710
Vishay/Siliconix
MOSFET N-Chan 400V 2.0 Amp
Data Sheet
0-730: $0.79
730-1000: $0.76
1000-2000: $0.74
2000-5000: $0.73
IRF710, SiHF710
IRF710, SiHF710
Other

Data Sheet
Negotiable 
IRF710_R4943
IRF710_R4943
Fairchild Semiconductor
MOSFET TO-220AB
Data Sheet
Negotiable 
IRF7101
IRF7101
International Rectifier
MOSFET N-CH 20V 3.5A 8-SOIC
Data Sheet
1-570: $0.45
IRF7101PBF
IRF7101PBF
International Rectifier
MOSFET
Data Sheet
0-1: $0.68
1-25: $0.40
25-100: $0.24
100-250: $0.23
IRF7101TR
IRF7101TR
International Rectifier
MOSFET N-CH 20V 3.5A 8-SOIC
Data Sheet
1-4000: $0.41