Product Summary

The IKW75N60T is an IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode.

Parametrics

IKW75N60T maximum ratings: (1)Collector-emitter voltage, VCE: 600 V; (2)DC collector current, limited by Tjmax, IC: 80A at TC = 25℃; 75A at TC = 100℃; (3)Pulsed collector current, tp limited by Tjmax, ICpuls: 225A; (4)Turn off safe operating area (VCE ≤ 600V, Tj ≤ 175℃): 225A; (5)Diode forward current, limited by Tjmax, IF: 150A at TC = 25℃; 75A at TC = 100℃; (6)Diode pulsed current, tp limited by Tjmax, IFpuls: 225 A; (7)Gate-emitter voltage, VGE: ±20 V; (8)Short circuit withstand time2) VGE = 15V, VCC ≤ 400V, Tj ≤ 150℃, tSC: 5μs; (9)Power dissipation TC = 25℃, Ptot: 428 W; (10)Operating junction temperature, Tj: -40 to +175℃; (11)Storage temperature, Tstg: -55 to +175℃; (12) Soldering temperature, 1.6mm (0.063 in.) from case for 10s: 260℃.

Features

IKW75N60T features: (1)Very low VCE(sat) 1.5 V (typ.); (2)Maximum Junction Temperature 175 ℃; (3)Short circuit withstand time -5μs; (4)Designed for : Frequency Converters; Uninterrupted Power Supply; (5)Trench and Fieldstop technology for 600 V applications offers : very tight parameter distribution; high ruggedness, temperature stable behavior; very high switching speed; low VCE(sat); (6)Positive temperature coefficient in VCE(sat); (7)Low EMI; (8)Low Gate Charge; (9)Very soft, fast recovery anti-parallel EmCon HE diode; (10)Complete product spectrum and PSpice Models.

Diagrams

IKW75N60T block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
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IKW75N60T
IKW75N60T

Infineon Technologies

IGBT Transistors LOW LOSS DuoPack 600V 75A

Data Sheet

0-130: $4.18
130-250: $3.85
250-500: $3.50
500-1000: $3.05
IKW75N60TA
IKW75N60TA

Infineon Technologies

IGBT Transistors 600V 75A 100nA

Data Sheet

0-142: $5.20
142-250: $4.74
250-500: $4.43
500-1000: $4.07