(Hong Kong)
Product Summary
The BUW42AP is a silicon multiepitaxial mesa PNP transistor. It is mounted respectively in TO-3 metal case, TO-218 plastic package and ISOWATT218 fully isolated package. The BUW42AP is intended in fast switching applications of high output power.
Parametrics
BUW42AP absolute maximum ratings: (1)Collector-emitter Voltage (VBE=0): -450V; (2)Collector-emitter Voltage (IB=0): -400V; (3)Emitter-base Voltage (IC=): -7V; (4)Collector Current: -15A; (5)Collector Peak Current: -30A; (6)Base Current: -10A; (7)Total Dissipation at TC＜25℃: 105W; (8)Storage Temperature: -65℃ to 150℃; (9)Max. Operating Junction Temperature: 150℃.
Features
BUW42AP features: (1)Collector Cutoff Current: -1mA; (2)Emitter Cutoff Current: -1mA; (3)Collector-emitter Sustaining Voltage (IB=0): -400V; (4)Collector-emitter Saturation Voltage (IC= -10A, IB= -3A): -1.5V; (5)Base-emitter Saturation Voltage (IC= -10A, IB= -3A): -2V; (6)DC Current Gain (IC= -3A, VCE= -5V): 12 to 80; (7)Resistive Load: Turn on time: 0.6μs; (8)Resistive Load: Storage time: 1.5μs; (9)Resistive Load: Fall time: 0.6μs.
Diagrams
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