(Hong Kong)
Product Summary
The BUV48 is an NPN silicon power transistor.
Parametrics
BUV48 absolute maximum ratings: (1)Collector-emitter voltage (VBE = 0V): 850V; (2)Collector-emitter voltage (RBE = 10Ω): 850V; (3)Collector-emitter voltage (IB = 0): 400V; (4)Continuous collector current IC: 15A; (5)Peak collector current ICM: 30A; (6)Continuous base current IB: 4A; (7)Peak base current IBM: 20A; (8)Non repetitive accidental peak surge current ICSM: 55A; (9)Continuous device dissipation at (or below) 25℃ case temperature Ptot: 125W; (10)Operating junction temperature range Tj: -65℃ to +150℃; (11)Storage temperature range Tstg: -65℃ to +150℃.
Features
BUV48 features: (1) Rugged Triple-Diffused Planar Construction; (2)15A Continuous Collector Current; (3)1000 Volt Blocking Capability.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 BUV48 |
Other |
|
Data Sheet |
Negotiable |
|
||||||||||||
 |
BUV48A |
STMicroelectronics |
Transistors Bipolar (BJT) NPN High Volt Power |
Data Sheet |
|
|
||||||||||||
|
BUV48AFI |
STMicroelectronics |
Transistors Bipolar (BJT) NPN High Volt Power |
Data Sheet |
Negotiable |
|
||||||||||||
|
BUV48A-S |
Bourns |
Transistors Bipolar (BJT) 1000V 15A NPN |
Data Sheet |
Negotiable |
|
||||||||||||
|
BUV48B |
Other |
|
Data Sheet |
Negotiable |
|
||||||||||||
|
BUV48C |
Other |
|
Data Sheet |
Negotiable |
|
||||||||||||
|
BUV48CFI |
Other |
|
Data Sheet |
Negotiable |
|
||||||||||||
|
BUV48-S |
Bourns |
Transistors Bipolar (BJT) 850V 15A NPN |
Data Sheet |
Negotiable |
|
||||||||||||
