(Hong Kong)
Product Summary
The BCX53 is a PNP Silicon AF Transistor.
Parametrics
BCX53 absolute maximum ratings: (1)Collector-emitter voltage VCEO: 80V; (2)Collector-base voltage VCBO: 100V; (3)Emitter-base voltage VEBO: 5V; (4)DC collector current IC: 1A; (5)Peak collector current ICM: 1.5A; (6)Base current IB: 100mA; (7)Peak base current IBM: 200mA; (8)Total power dissipation, TS = 130℃: 1W; (9)Junction temperature Tj: 150℃; (10)Storage temperature Tstg: -65℃ to 150℃.
Features
BCX53 features: (1)For AF driver and output stages; (2)High collector current; (3)Low collector-emitter saturation voltage; (4)Complementary types: BCX54, BCX56 (NPN).
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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 BCX53TA |
Diodes Inc. / Zetex |
Transistors Bipolar (BJT) - |
Data Sheet |
Negotiable |
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BCX5316TA |
Diodes Inc. |
Transistors Bipolar (BJT) PNP Medium Power |
Data Sheet |
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 |
BCX53-16,146 |
NXP Semiconductors |
Transistors Bipolar (BJT) Trans GP BJT PNP 80V 1A 4-Pin(3+Tab) |
Data Sheet |
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BCX53-16,135 |
NXP Semiconductors |
Transistors Bipolar (BJT) Trans GP BJT PNP 80V 1A 4-Pin(3+Tab) |
Data Sheet |
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 |
BCX53-16,115 |
NXP Semiconductors |
Transistors Bipolar (BJT) PNP MED 1A 80V |
Data Sheet |
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BCX5310TA |
Diodes Inc. / Zetex |
Transistors Bipolar (BJT) - |
Data Sheet |
Negotiable |
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BCX53-10,135 |
NXP Semiconductors |
Transistors Bipolar (BJT) TRANS MED PWR TAPE13 |
Data Sheet |
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BCX53-10,115 |
NXP Semiconductors |
Transistors Bipolar (BJT) TRANS MED PWR TAPE-7 |
Data Sheet |
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