Product Summary

The ATF-13136-TR1 is a 2-16 GHz Low Noise Gallium Arsenide FET. It is a high performance gallium arsenide Schottky-barrier-gate field effect transisitor housed in a cost effective microstrip package. Its premium noise figure makes the ATF-13136-TR1 appropriate for use in the first stage of low noise amplifiers in the 2-16 GHz frequency range.

Parametrics

ATF-13136-TR1 absolute maximum ratings: (1)Drain-Source Voltage: +5V; (2)Gate-Source Voltage: -4V; (3)Drain Current: IDSS; (4)Power Dissipation: 225mW; (5)Channel Temperature: 175℃; (6)Storage Temperature: -65℃ to 175℃.

Features

ATF-13136-TR1 features: (1) Low Noise Figure: 1.2dB typical at 12GHz; (2) High Associated Gain: 9.5dB typical at 12GHz; (3) High Output Power: 17.5dBm typical P1 db at 12GHz; (4) Cost Effective Ceramic Microstrip Package; (5) Tape-and-reel Packaging Option Available.

Diagrams

ATF-13136-TR1 Dimmension

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